Method for manufacturing silicon wafers

Details Method for manufacturing silicon wafers Method for manufacturing silicon wafers

2005-09-02

2009-10-13

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

Reexamination Certificate

active

07601644

ABSTRACT:
This silicon wafer production process comprises in the order indicated a planarization step, in which the front surface and the rear surface of a wafer are ground or lapped, a single-wafer acid etching step, in which an acid etching liquid is supplied to the surface of the wafer while spinning and the entire wafer surface is etched to control the surface roughness Ra to 0.20 μm or less, and a double-sided simultaneous polishing step, in which the front surface and the rear surface of the acid etched wafer are polished simultaneously. The process may comprise a single-sided polishing step, in which the top and bottom of the acid etched wafer are polished in turn, instead of the double-sided simultaneously polishing step.

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Supplementary European Search Report for Application No. EP 05 78 1387 dated Aug. 12, 2008.

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