Apparatus for forming a thin film

Details Apparatus for forming a thin film Apparatus for forming a thin film

1987-12-30

1989-01-24

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118722, 118725, 118 501, 204298, 427 38, 427 39, 427 531, C23C 1448, C23C 836, C23C 1648

Patent

active

047994541

ABSTRACT:
An apparatus for forming a thin film in which the reactive gases, which have been activated by the reactive gas activation means, accelerated by the kinetic energy controlling means, and still more activated by the excimer laser beam emitted toward the neighborhood of the substrate from the excimer laser beam emitting means disposed outside of the vacuum chamber, react with the material to be deposited, which has been clustered or turned into the cluster ion by the ICB device and accelerated, to form a thin film of a compound as the material to be deposited on the substrate disposed within the vacuum chamber maintained at a predetermined degree of vacuum.

REFERENCES:
patent: 4664769 (1987-05-01), Cuoma
Takaoka et al., "A1N and A1.sub.2 O.sub.3 Film Formation by the Simultaneous Use of a Microwave Ion Source and an ICB System", Proc. 11th Symp. on ISIAT (1987), Tokyo, pp. 351-356.

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