Magnetic sensor having a Ru/Si based seedlayer providing...

Details Magnetic sensor having a Ru/Si based seedlayer providing... Magnetic sensor having a Ru/Si based seedlayer providing...

2005-01-10

2009-11-10

Wellington, Andrea L (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324120, C360S327200, C360S327300

Reexamination Certificate

active

07616409

ABSTRACT:
A magnetoresistive sensor having a novel seed layer that allows a bias layer formed there over to have exceptional hard magnetic properties when deposited over a crystalline structure such as an AFM layer in a partial mill sensor design. The seed layer structure includes alternating layers of Ru and Si and a layer of CrMo formed thereover. The seed layer interrupts the epitaxial growth of an underlying crystalline structure, allowing a hard magnetic material formed over the seed layer to have a desired grain structure that is different from that of the underlying crystalline layer. The seed layer is also resistant to corrosion, providing improved sense current conduction to the sensor.

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