Magnetic tunnel junction having diffusion stop layer

Details Magnetic tunnel junction having diffusion stop layer Magnetic tunnel junction having diffusion stop layer

2005-07-26

2009-08-18

Renner, Craig A (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S314000

Reexamination Certificate

active

07576956

ABSTRACT:
Magnetic or magnetoresistive tunnel junctions (MTJs) having diffusion stop layers to eliminate or reduce diffusion of oxygen, nitrogen or other particles from the barrier layer to the ferromagnetic layers during the film deposition process including the barrier oxidation or nitridation process and the post annealing process. Such MTJs may be used in various applications including magnetic memory (MRAM) devices and magnetic recording heads.

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