Magnetic random access memory with selective toggle memory...

Details Magnetic random access memory with selective toggle memory... Magnetic random access memory with selective toggle memory...

2008-05-05

2009-08-11

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S785000

Reexamination Certificate

active

07572646

ABSTRACT:
A toggle MTJ is disclosed that has a SAF free layer with two or more magnetic sub-layers having equal magnetic moments but different anisotropies which is achieved by selecting Ni˜0.8Fe˜0.2for one sub-layer and CoFeB or the like with a uni-axial anisotropy of 10 to 30 Oe for the higher anisotropy sub-layer. When a field is applied at <10° angle from the easy axis, magnetic vectors for the two sub-layers rotate to form different angles from the easy axis. A method is also described for selectively writing to bits along a word line that is orthogonal to bit line segments and avoids the need to “read first”. A bipolar word line pulse with two opposite pulses separated by a no pulse interval is applied in the absence of a bit line pulse to write a “0”. A bit line pulse opposite the second word line pulse writes a “1”.

REFERENCES:
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6714446 (2004-03-01), Engel
patent: 6956764 (2005-10-01), Engel et al.
patent: 2005/0153063 (2005-07-01), Janesky et al.
patent: 2005/0237796 (2005-10-01), Kim et al.
“A 0.18um 4Mb Toggling MRAM,” by M. Durlam et al., IEDM Technical Digest 2003, Session 34, paper #6, 3 pages.
“A Low Power 1Mbit MRAM based on 1T1MTJ bit Cell Integrated with Copper Interconnects,” by M. Durlam et al., VLSI Conference 2002, Motorola, pp. 1-22.

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