Method of growing semiconductor crystal

Details Method of growing semiconductor crystal Method of growing semiconductor crystal

2004-03-18

2009-12-01

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S084000, C117S088000, C117S089000, C117S090000, C117S092000, C117S097000, C117S100000, C117S101000, C117S103000, C117S105000, C117S106000, C117S108000, C117S109000, C117S951000, C117S952000

Reexamination Certificate

active

07625447

ABSTRACT:
SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This problem is solved as follows. The surface of a SiC substrate1is rendered into a step-terrace structure by performing a heating process in an atmosphere of HCl gas. The surface of the SiC substrate1is then treated sequentially with aqua regia, hydrochloric acid, and hydrofluoric acid. A small amount of silicon oxide film formed on the surface of the SiC substrate1is etched so as to form a clean SiC surface3on the substrate surface. The SiC substrate1is then installed in a high-vacuum apparatus and the pressure inside is maintained at ultrahigh vacuum (such as 10−6to 10−8Pa). In the ultrahigh vacuum state, a process of irradiating the surface with a Ga atomic beam5at time t1at temperature of 800° C. or lower and performing a heating treatment at 800° C. or higher is repeated at least once. The temperature is then set to the growth temperature of an AlN film, and the SiC substrate surface3is initially irradiated with Al atoms8ain ultrahigh vacuum state, followed by the feeding of N atoms8b.

REFERENCES:
patent: 5760426 (1998-06-01), Marx et al.
patent: 6165874 (2000-12-01), Powell et al.
patent: 6273950 (2001-08-01), Kitabatake
patent: 6447604 (2002-09-01), Flynn et al.
patent: 2001/0015170 (2001-08-01), Kitabatake
patent: 2002/0158258 (2002-10-01), Chyi
patent: 2003/0136333 (2003-07-01), Semond et al.
patent: 2004/0164341 (2004-08-01), Forbes et al.
patent: 489142 (1999-10-01), None
patent: 503590 (2001-04-01), None
patent: 516102 (2001-06-01), None
patent: 09-181355 (1995-12-01), None
patent: 11-145514 (1997-11-01), None
patent: WO 01/95380 (2001-12-01), None
Li et al, “Field-ion scanning tunneling microscopy study of the atomic structure of 6H-SiC (0001) surfaces cleaned by in situ Si molecular beam etching,” J. Appl. Phys. 80 (4), Aug. 15, 1996, pp. 2524-2526.
Kugimiya et al., “Si-Beam Radiation Cleaning in Molecular beam epitaxy,” Japanese Journal of Applied Physics vol. 24, No. 5, May 1985, pp. 564-567.
Norio Onojima et al., “ Molecular-Beam Epitaxial Growth of Insulating AIN on Surface-Controlled 6H-SiC Substrate by HCI Gas Etching”, Applied Physics Letters, vol. 80, No. 1 (Jan. 7, 2002), pp. 76-78.
Norio Onojima et al., “High-Quality AIN by Initial Layer-by-Layer Growth on Surface-Controlled 4H-SiC(0001) Substrate”, Jpn. J. Appl. Phys. vol. 42, Part 2, No. 5A (May 1, 2003), pp. L445-L447.
N. Onojima et al., “Impact of SiC Surface Control on Initial Growth Mode and Crystalline Quality of AIN Grown by Molecular-Beam Epitaxy”, Phys. Stat. Sol. (c) 0, No. 7 (2003), pp. 2529-2532/DOI 10.1002/pssc.200303358.
Jun Suda et al., “Either Step-Flow or Layer-by-Layer Growth for AIN on SiC (0001) Substrates”, Mat. Res. Soc. Symp. Proc., vol. 798 (2004), © Materials Research Society, pp. Y3.4.1-Y3.4.6.
Chinese Office Action dated Jul. 21, 2008 regarding Taiwanese R.O.C. patent application No. 093107211, in Chinese language.
Norio Onojima et al., “Lattice Relaxation Process of AIN Growth on Atomically Flat 6H-SiC Substrate in Molecular Beam Epitaxy”, Journal of Crystal Growth (2002), pp. 1012-1016.
Steve Wright et al., “Reduction of Oxides on Silicon by Heating in a Gallium Molecular Beam at 800° C.a”, Appl. Phys. Lett, vol. 36, No. 3, Feb. 1, 1980, pp. 210-211.

Affiliated with

Also associated with

Rating

Method of growing semiconductor crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of growing semiconductor crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of growing semiconductor crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4136641