Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-04-11
2009-06-02
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000
Reexamination Certificate
active
07541658
ABSTRACT:
An image sensor package and methods for simultaneously fabricating a plurality of such packages. A layer of barrier material comprising a matrix of raised walls is formed around chip attachment areas located in an array on a carrier substrate to create chip cavities. Image sensor chips are wire bonded within the chip cavities, and a unitary transparent cover is sealed in place over the entire assembly. The resultant image sensor package array is then singulated along lines running between the chip attachment areas and in parallel to the raised walls to provide individual image sensor packages. The layer of barrier material may be formed directly on the carrier substrate by molding methods or by depositing a series of curable layers of liquid or flowable material in a stacked fashion. Alternatively, the layer of barrier material may be preformed as a unitary frame and then secured to the carrier substrate.
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Data Sheet, Amkor Technology, Inc., “VisionPak LLC,” 2 pages.
Micro)n Technology, Inc.
Pham Long
TraskBritt
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