Method for producing silicon epitaxial wafer and silicon...

Details Method for producing silicon epitaxial wafer and silicon... Method for producing silicon epitaxial wafer and silicon...

2004-09-27

2009-11-10

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S090000, C117S093000, C117S094000, C117S939000

Reexamination Certificate

active

07615116

ABSTRACT:
In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted.

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