Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-04-11
2009-02-03
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S046000
Reexamination Certificate
active
07485482
ABSTRACT:
The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.
REFERENCES:
patent: 2006/0225644 (2006-10-01), Lee et al.
patent: 2007/0121690 (2007-05-01), Fujii et al.
Daisuke Morita, et al., “Watt-Class High-Power 365 nm Ultraviolet Light-Emitting Diodes,” Japanese Journal of Applied Physics, 2004, pp. 5945-5950, vol. 43, No. 9A, The Japan Society of Applied Physics.
Kenji Orita, et al., “High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal,” Japanese Journal of Applied Physics, 2004, pp. 5809-5813, vol. 43, No. 8B, The Japan Society of Applied Physics.
Back Hyung Ky
Kim Dong Woo
Kim Yong Chun
Kong Moon Heon
Lee Jae Hoon
Chen Jack
McDermott Will & Emery LLP
Samsung Electro-Mechanics Co. Ltd.
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