Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2008-10-10
2009-11-24
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257SE23175
Reexamination Certificate
active
07622797
ABSTRACT:
To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 μm which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.
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Arai Yasuyuki
Goto Yuugo
Maruyama Junya
Ohno Yumiko
Shibata Noriko
Dickey Thomas L
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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