Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2007-07-12
2009-10-20
Bernatz, Kevin M (Department: 1794)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C428S811100, C428S811500, C428S812000, C428S813000
Reexamination Certificate
active
07606010
ABSTRACT:
ZnMg oxide tunnel barriers are grown which, when sandwiched between ferri- or ferromagnetic layers, form magnetic tunnel junctions exhibiting high tunneling magnetoresistance (TMR). The TMR may be increased by annealing the magnetic tunnel junctions. The zinc-magnesium oxide tunnel barriers may be incorporated into a variety of other devices, such as magnetic tunneling transistors and spin injector devices. The ZnMg oxide tunnel barriers are grown by first depositing a zinc and/or magnesium layer onto an underlying substrate in oxygen-poor (or oxygen-free) conditions, and subsequently depositing zinc and/or magnesium onto this layer in the presence of reactive oxygen.
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Bernatz Kevin M
International Business Machines - Corporation
Johnson Daniel E.
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