Method for manufacturing CMOS image sensor

Details Method for manufacturing CMOS image sensor Method for manufacturing CMOS image sensor

2006-12-19

2009-12-15

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S058000, C438S048000, C438S022000, C257S291000, C257S292000, C257SE27131, C257SE27133

Reexamination Certificate

active

07632699

ABSTRACT:
A method for manufacturing a CMOS image sensor that independently forms a poly routing line connected to a gate poly of a reset transistor is provided. In an embodiment, a semiconductor substrate is prepared defining a device isolation region and an active region. Subsequently, a plurality of gate polys are formed on a predetermined portion of the active region. A photodiode is formed in a portion of the semiconductor substrate located at one side of one of the plurality of gate polys. After an oxide layer is deposited on the semiconductor substrate including the gate polys, the oxide layer is selectively removed to form oxide layer patterns for exposing a portion of the plurality of gate polys. After a polysilicon layer is deposited on the oxide layer pattern, the polysilicon layer is selectively removed to form a routing line connected to the portion of the plurality of gate polys.

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patent: 6927090 (2005-08-01), Rhodes
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patent: 2004/0082154 (2004-04-01), Lim
patent: 2006/0279649 (2006-12-01), Cole

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