Structure for an image TFT array for an indirect X-ray sensor

Details Structure for an image TFT array for an indirect X-ray sensor Structure for an image TFT array for an indirect X-ray sensor

2009-03-18

2009-12-15

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S347000, C257SE21326

Reexamination Certificate

active

07633091

ABSTRACT:
In the image TFT array structure, at least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer. The lower electrode and the upper electrode of the storage capacitor have an approximately same large area.

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