Integrated III-nitride power devices

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S201000, C257S506000, C257SE29089, C257SE29249, C257SE29296

Reexamination Certificate

active

07550781

ABSTRACT:
A III-nitride based integrated semiconductor device which includes at least two III-nitride based semiconductor devices formed in a common die.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4511813 (1985-04-01), Pan
patent: 5387880 (1995-02-01), Kobayashi
patent: 5808332 (1998-09-01), Kohno et al.
patent: 6465814 (2002-10-01), Kasahara et al.
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 6690042 (2004-02-01), Khan et al.
patent: 2002/0041003 (2002-04-01), Udrea et al.
patent: 2002/0171405 (2002-11-01), Watanabe
patent: 2003228320 (2003-08-01), None
Complete Guide to Semiconductor Devices—Second Edition—Kwok K. NG—pp. 175-177 (2007).
International Search Report Dated Apr. 28, 2006 from Corresponding PCT Application No. PCT/US05/04615.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated III-nitride power devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated III-nitride power devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated III-nitride power devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4128727

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.