Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Reexamination Certificate
2005-02-11
2009-06-23
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
C257S201000, C257S506000, C257SE29089, C257SE29249, C257SE29296
Reexamination Certificate
active
07550781
ABSTRACT:
A III-nitride based integrated semiconductor device which includes at least two III-nitride based semiconductor devices formed in a common die.
REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4511813 (1985-04-01), Pan
patent: 5387880 (1995-02-01), Kobayashi
patent: 5808332 (1998-09-01), Kohno et al.
patent: 6465814 (2002-10-01), Kasahara et al.
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 6690042 (2004-02-01), Khan et al.
patent: 2002/0041003 (2002-04-01), Udrea et al.
patent: 2002/0171405 (2002-11-01), Watanabe
patent: 2003228320 (2003-08-01), None
Complete Guide to Semiconductor Devices—Second Edition—Kwok K. NG—pp. 175-177 (2007).
International Search Report Dated Apr. 28, 2006 from Corresponding PCT Application No. PCT/US05/04615.
Beach Robert
Kinzer Daniel M.
Farjami & Farjami LLP
International Rectifier Corporation
Malsawma Lex
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