Method of manufacturing semiconductor laser

Details Method of manufacturing semiconductor laser Method of manufacturing semiconductor laser

1994-12-09

1996-09-17

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437133, 437166, 437173, 437174, H01L 2120

Patent

active

055568041

ABSTRACT:
A method of manufacturing a ridge-buried semiconductor laser includes growing semiconductor layers including at least a first conductivity type lower cladding layer, an active layer, and a second conductivity type upper cladding layer on a semiconductor substrate; forming a striped-shaped impurity diffusion source film including atoms producing the second conductivity type when diffused into the upper cladding layer at a stripe-shaped region which becomes a top of a ridge; ridge-etching the semiconductor crystal layers using a ridge-etching mask including the impurity diffusion source film so that the second conductivity type upper cladding layer has a ridge shape; growing a first conductivity type current blocking layer to bury the ridge; and forming a high dopant impurity concentration region including a dopant impurity producing the second conductivity type impurity in the second conductivity type upper cladding layer of the ridge region by diffusing atoms from the stripe-shaped impurity diffusion source film by heat treatment. This method provides a semiconductor laser in which the element resistance is reduced, high-frequency superposition is possible at a practical level, and characteristics at the time of the high-frequency superposition are improved.

REFERENCES:
patent: 4771010 (1988-09-01), Epler et al.
patent: 5023199 (1991-06-01), Murakami et al.
patent: 5352628 (1994-10-01), Fumaba
Ueno et al. in "Electronics Letters X vol. 26(20), Sep. 1990, pp. 1726-1728" in CW high power--AlGaInP visible 1 ser diode.
Fukuzawa et al. in "Appl.Phys.Letters vol. 45(1), Jul 1984, pp. 1-3" in GaAlAs buried multiqant m well lasers fabricated by diffusion-induced disordering.
Epler et al. in "Laser induced disordering of GaAs-AlGaAs superlattice--".

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