Capacitor structure and method for preparing the same

Details Capacitor structure and method for preparing the same Capacitor structure and method for preparing the same

2006-10-20

2009-08-04

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C257SE21001

Reexamination Certificate

active

07569460

ABSTRACT:
A capacitor structure comprises a substrate having a contact plug, a conductive cylinder positioned on the substrate and an electroplating structure covering the conductive cylinder, wherein a bottom electrode of the capacitor structure comprises the conductive cylinder and the electroplating structure. The conductive cylinder can be a hollow conductive cylinder, and the electroplating structure comprises a first conductive layer covering the inner sidewall and bottom surface of the hollow conductive cylinder and a second conductive layer covering the first conductive layer and the outer sidewall of the hollow conductive cylinder. The conductive cylinder and the electroplating structure can be made of different conductive material, and the free end of the conductive cylinder is preferably round. The conductive cylinder can be made of titanium nitride or tantalum nitride, while the electroplating structure can be made of ruthenium or platinum.

REFERENCES:
patent: 5895250 (1999-04-01), Wu
patent: 6599794 (2003-07-01), Kiyotoshi et al.

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