Semiconductor device manufacturing: process – Making regenerative-type switching device – Having structure increasing breakdown voltage
Reexamination Certificate
2006-11-09
2009-08-11
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having structure increasing breakdown voltage
C257SE21383
Reexamination Certificate
active
07572683
ABSTRACT:
A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the semiconductor device is disclosed. The reverse blocking IGBT reduces the reverse leakage current and the on-voltage by bringing portions of an n−-type drift region1that extend between p-type base regions and an emitter electrode into Schottky contact to form Schottky junctions.
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Takei et al.; “600 V-IGBT with Reverse Blocking Capability”; Proceedings of 2001 International Symposium on Power Semiconductor Devices & ICs, Osaka, Japan; vol. 11-1; pp. 413-416.
Naito Tatsuya
Nemoto Michio
Takei Manabu
Fuji Electric Device Technology Co. Ltd.
Rossi Kimms & McDowell LLP
Thomas Toniae M
Wilczewski M.
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