Fishing – trapping – and vermin destroying
Patent
1995-05-10
1996-09-17
Weisstuch, Aaron
Fishing, trapping, and vermin destroying
437 4, 437101, 134 11, 427534, 136258, H01L 21306, H01L 3120
Patent
active
055567940
ABSTRACT:
A method of manufacturing a semiconductor device having a non-single crystalline semiconductor layer including an intrinsic silicon which contains hydrogen or halogen and is formed on a substrate by a vapor phase reaction in a reaction chamber which may have a substrate holder. Sodium is removed from the inside of the reaction chamber and/or the surface of the substrate holder by using a chlorine containing gas at a sufficiently high temperature such as 1150.degree. C. in order to remove sodium therefrom so that the concentration of sodium in the semiconductor layer is preferably 5.times.10.sup.18 atoms/cm.sup.3 or less.
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Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Weisstuch Aaron
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