Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2004-10-29
2009-08-11
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S192000, C257SE29246
Reexamination Certificate
active
07573078
ABSTRACT:
A transistor comprising a plurality of active semiconductor layers on a substrate, with source and drain electrodes in contact with the semiconductor layers. A gate is formed between the source and drain electrodes and on the plurality of semiconductor layers. A plurality of field plates are arranged over the semiconductor layers, each of which extends from the edge of the gate toward the drain electrode, and each of which is isolated from said semiconductor layers and from the others of the field plates. The topmost of the field plates is electrically connected to the source electrode and the others of the field plates are electrically connected to the gate or the source electrode.
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Saito W et al., Design and Demonstration of High Breakdown Voltage GAN High Electron Mobility Trans
Mishra Umesh
Moore Marcia
Parikh Primit
Wu Yifeng
Cree Inc.
Koppel, Patrick, Heybl & Dawson
Wilson Allan R.
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