Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-03-12
2009-08-25
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S085000, C257SE33032, C372S050124, C372S043010
Reexamination Certificate
active
07579630
ABSTRACT:
A semiconductor optical device includes a GaAs substrate of a first conductivity type; a III-V compound semiconductor layer provided on the GaAs substrate; an active layer provided on the III-V compound semiconductor layer; and a cladding layer of a second conductivity type provided on the active layer, wherein the band gap energy of the III-V compound semiconductor layer is larger than the band gap energy of the GaAs substrate, wherein the band gap energy of the active layer is smaller than the band gap energy of the GaAs substrate, and wherein the thickness of the III-V compound semiconductor layer is not more than 0.2 μm.
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Dang Phuc T
Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
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