Solid-state image sensing device, method for manufacturing...

Details Solid-state image sensing device, method for manufacturing... Solid-state image sensing device, method for manufacturing...

2007-07-26

2009-12-29

Porta, David P (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

C250S330000, C250S341800, C343S7000MS, C343S703000

Reexamination Certificate

active

07638769

ABSTRACT:
The present invention provides a solid-state image sensing device that converts long-wavelength light represented by the terahertz band into electric signals without being affected by the fluctuation of radiated heat, and outputs the signals mainly as picture signals; a method for manufacturing the same, and an imaging system. The cell unit has an antenna to generate electrical signals by receiving incident electric waves, an electrical resistor electrically connected to the antenna, and to vary the temperature of the cell unit by generating Joule heat corresponding to the electrical signals, and a thermoelectric conversion element electrically connected to the support structure portion, electrically insulated from the antenna and the electrical resistor, and thermally connected to the electrical resistor, to generate electrical signals by detecting the temperature variation of the cell unit; and the side of the incident electric waves in the cell unit is formed of a material to reflect infrared lights.

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Tomohiro Ishikawa, et al., “Low-cost 320×240 uncooled IRFPA using conventional silicon IC process.” Proceedings of SPIE vol. 3698, Apr. 1999, pp. 556-564.

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