Programming non-volatile memory with dual voltage select...

Details Programming non-volatile memory with dual voltage select... Programming non-volatile memory with dual voltage select...

2006-10-17

2009-11-10

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185020

Reexamination Certificate

active

07616490

ABSTRACT:
A select gate structure for a non-volatile storage system includes a select gate and a coupling electrode which are independently drivable. The coupling electrode is adjacent to a word line in a NAND string and has a voltage applied which reduces gate induced drain lowering (GIDL) program disturb of an adjacent unselected non-volatile storage element. In particular, an elevated voltage can be applied to the coupling electrode when the adjacent word line is used for programming. A reduced voltage is applied when a non-adjacent word line is used for programming. The voltage can also be set based on other programming criterion. The select gate is provided by a first conductive region while the coupling electrode is provided by a second conductive region formed over, and isolated from, the first conductive region.

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