Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

2005-07-05

2009-10-13

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S734000

Reexamination Certificate

active

07602063

ABSTRACT:
In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film.

REFERENCES:
patent: 6358838 (2002-03-01), Furusawa et al.
patent: 6680541 (2004-01-01), Furusawa et al.
patent: 6740602 (2004-05-01), Hendriks et al.
patent: 2003/0162410 (2003-08-01), Huang et al.
patent: 2003/0201465 (2003-10-01), Ryuzaki et al.
patent: 2004/0033373 (2004-02-01), Rose et al.
patent: 2000-340569 (2000-12-01), None
patent: 2000-349083 (2000-12-01), None
patent: 2001-203200 (2001-07-01), None
patent: 2002-329718 (2002-11-01), None
Machine Translation of JP 2000-340569.
Machine Translation of JP 2002-329718.
M. Inohara, et al., “High Performance Copper and Low-k Interconnect Technology Fully Compatible to 90nm-node SOC Application (CMOS4)”, Technical Digest of 2002 IEDM, pp. 77-80.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4121585