Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-03-07

2009-02-03

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S118000, C438S612000

Reexamination Certificate

active

07485546

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device by which the yield of bumps will be increased. First, an insulation layer, a barrier layer, and a seed layer are sequentially formed on a principal surface of a semiconductor substrate. Then, a protection layer is formed to cover the seed layer and the bumps. Next, portions of the protection layer are removed so that portions of the protection layer covering the sidewalls of the bumps are not removed. Next, the principal surface of the semiconductor substrate is supported by the support through a bonding material, and then a back surface of the semiconductor substrate is polished. Next, the back surface of the semiconductor substrate is polished, and the support and the bonding material are removed.

REFERENCES:
patent: 7358602 (2008-04-01), Hara
patent: 2005/0051883 (2005-03-01), Fukazawa

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