Manufacturing method of bonded wafer

Details Manufacturing method of bonded wafer Manufacturing method of bonded wafer

2005-06-06

2009-10-13

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000

Reexamination Certificate

active

07601613

ABSTRACT:
In a first ion implantation step (a1), a delamination-intended ion implantation layer3is formed by implanting ions at a dosage less than a critical dosage from the insulating film2side of a bond wafer1. In an additional function layer deposition step (b2), an additional function layer4is deposited on the insulating film2of the bond wafer1. In a second ion implantation step (c1), by implanting ions at a dosage, the delamination-intended ion implantation layer3is matured into a delamination ion implantation layer3′. Thereby, the delamination ion implantation layer is formed by two steps of ion implantation having the additional function layer deposition step therebetween, and therefore non-uniformity of the additional function layer does not influence uniformity of a film thickness of a bonded semiconductor thin layer.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 6746559 (2004-06-01), Ohmi et al.
patent: 6900113 (2005-05-01), Nakano et al.
patent: 7229899 (2007-06-01), Moriceau et al.
patent: 2006/0040469 (2006-02-01), Aga et al.
patent: 3048201 (2000-03-01), None
patent: 2004-63730 (2004-02-01), None

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