Methods for reducing stress in microelectronic devices and...

Details Methods for reducing stress in microelectronic devices and... Methods for reducing stress in microelectronic devices and...

2005-06-14

2009-08-11

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

C257S684000, C257SE23001

Reexamination Certificate

active

07573125

ABSTRACT:
Methods for reducing stress in microelectronic devices and microelectronic devices formed using such methods are disclosed herein. One such device can include a first support member, a second support member, and a microelectronic die positioned between the first support member and the second support member such that the second support member at least approximately completely covers a surface of the die. The die is in intimate contact with both the first support member and the second support member and electrically coupled to at least one of the first support member and the second support member. The device further includes a fill material between the first and second support members and at least partially encapsulating the die. The second support member has structural material characteristics that are closer to those of the first support member than to the structural material characteristics of the fill material.

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