Semiconductor integrated circuit device including wiring...

Details Semiconductor integrated circuit device including wiring... Semiconductor integrated circuit device including wiring...

2007-08-13

2009-12-01

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE27009, C257SE23142, C257SE21580, C257SE21582, C257SE23141, C257SE29345, C257SE23010, C257SE23194, C257S506000, C257S773000, C257S633000, C257S401000, C257S776000, C257S579000, C257S288000, C257S368000, C257S388000, C257S183000, C257S197000, C257S762000, C257S766000, C257S374000

Reexamination Certificate

active

07626267

ABSTRACT:
Interconnections are formed over an interlayer insulating film which covers MISFETQ1formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element-isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.

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Office Action of JP Appln. No. 2005-337967 with translation.

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