Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-11-06

1991-05-28

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 372 49, H01S 319

Patent

active

050200682

ABSTRACT:
A multi-quantum well laser having a self-aligned structure which limits catastophic optical damage by producing window regions near the facets without significantly decreasing the efficiency of the laser. The semiconductor laser includes at least a first conductivity type lower cladding layer, an active layer including a multi-quantum well structure, a second conductivity type first upper cladding layer, a first conductivity type current blocking layer, and a second conductivity type second upper cladding layer successively disposed on a first conductivity type semiconductor substrate. The current blocking layer has a central elongate stripe shaped current confinement groove extending between the laser facets which stabilizes the transverse mode and confines current to a channel-like region in the active layer. First conductivity type dopant impurities form disordering regions located adjacent the facets which invade and disorder the multi-quantum well active layer to create disordered active layer regions. Second conductivity type dopant impurities form separating regions located adjacent the faects which separate the current blocking layer and the disordering regions to prevent current leakage between the current blocking layer and the disordering regions.

REFERENCES:
patent: 4546481 (1985-10-01), Yamamoto et al.
patent: 4769821 (1988-09-01), Gotoh
"High-Power Operation of Index-Guided Visible GaAs/GaAlAs Multiquantum Well Lasers", K. Uomi et al., Appl. Phys. Lett., 45(8), Oct. 15, 1984, pp. 818-820.
"SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice", J. Kobayashi et al., Japanese Journal of Applied Physics, vol. 25, No. 5, May 1986, pp. L385-L387.
"AlGaAs Window Stripe Buried Multiquantum Well Lasers", H. Nakashima et al., Japanese Journal of Applied Physics, vol. 24, No. 8, Aug. 1985, pp. L647-L649.
"High Power (2.1W) 10-Stripe AlGaAs Laser Arrays With Si Disordered Facet Windows", R. L. Thornton et al., Appl. Phys. Lett., 49(23), 12/08/86, pp. 1572-1574.

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