Semiconductor device including vanadium oxide sensor element...

Details Semiconductor device including vanadium oxide sensor element... Semiconductor device including vanadium oxide sensor element...

2005-05-24

2009-06-09

Porta, David P (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

C257S467000, C257S468000, C257S536000, C257S537000, C250S338400, C250S339040

Reexamination Certificate

active

07544940

ABSTRACT:
In a semiconductor device including a semiconductor substrate, and at least one sensor element made of vanadium oxide formed over the semiconductor substrate, the sensor element is designed so that a density of a current flowing through the sensor element is between 0 and 100 μA/μm2.

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