LDMOS gate controlled schottky diode

Details LDMOS gate controlled schottky diode LDMOS gate controlled schottky diode

2005-01-06

2009-10-27

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

C257S280000, C257S281000, C257SE27068, C257SE29338

Reexamination Certificate

active

07608907

ABSTRACT:
An improved diode is disclosed. The diode comprises a Schottky diode and a LDMOS device coupled in series with the Schottky diode. In a preferred embodiment, a forward current from the Schottky diode is allowed to flow through the channel of a depletion mode LDMOS that allows gate control over Schottky forward current. Integrating the Schottky diode into the drain of the depletion mode LDMOS forms the device structure.

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patent: 6784489 (2004-08-01), Menegoli
patent: 7019377 (2006-03-01), Tsuchiko
patent: 7141860 (2006-11-01), Khemka et al.
patent: 2005/0098845 (2005-05-01), Matsudai et al.

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