Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1990-01-30

1991-05-28

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

050200674

ABSTRACT:
A semiconductor laser device includes an n type Al.sub.x Ga.sub.1-x As first cladding layer disposed on an n type GaAs substrate, an n type Al.sub.y Ga.sub.1-y As (x>y) light guide layer disposed on the first cladding layer, an Al.sub.z Ga.sub.l-z As (y>z) active layer disposed on the light guide layer, a p type Al.sub.p Ga.sub.l-p As second cladding layer disposed on the active layer and including a ridge except in the neighborhood of at least of the cavity facets, an n type GaAs current blocking layer disposed on the second cladding layer but not on top of the ridge, and a p type GaAs contact layer disposed on the current blocking layer and on top of the ridge portion.

REFERENCES:
patent: 4371966 (1983-02-01), Scifres et al.
patent: 4849372 (1989-07-01), Takemoto
patent: 4916709 (1990-04-01), Ota et al.
patent: 4961197 (1990-10-01), Tanaka et al.
patent: 4964135 (1990-10-01), Mitsui et al.
Mawst et al., "Complementary Self-Aligned. . . Deposition", Electronics Letters, vol. 21, No. 20, Sep. 1985, pp. 903-905.

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