Method of patterning a metal layer in a semiconductor device

Details Method of patterning a metal layer in a semiconductor device Method of patterning a metal layer in a semiconductor device

2000-08-25

2009-12-01

Wilson, Allan R. (Department: 2815)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S734000, C438S508000

Reexamination Certificate

active

07625823

ABSTRACT:
In a method of manufacturing a metal pattern, a metal layer is deposited on a passivation layer, and a photoresist pattern is then formed on the metal layer. Using the photoresist pattern as a mask, an exposed portion of the metal layer is treated with a plasma to lower a binding force in the metal. The metal layer is then etched to form a the metal pattern. The method is applicable to the formation of pixel electrodes in LCD devices.

REFERENCES:
patent: 5286337 (1994-02-01), Tsou
patent: 5723366 (1998-03-01), Suzuki et al.
patent: 5771110 (1998-06-01), Hirano et al.
patent: 5843277 (1998-12-01), Goto et al.
patent: 5968847 (1999-10-01), Ye et al.
patent: 6133145 (2000-10-01), Chen
patent: 6136723 (2000-10-01), Nagase
patent: 6583065 (2003-06-01), Williams et al.
patent: 361002368 (1986-01-01), None
patent: 03-141641 (1991-06-01), None
patent: 408043857 (1996-02-01), None
patent: 1998-0015324 (1998-05-01), None
M. Mhri et al., Plasma Etching of ITO Thin Films Using a CH4/H2 Gas Mixture, Japanese Journal of Applied Physics, vol. 29, No. 10, Oct. 1990, pp. L 1932-L 1935.
English language translation of JP361002368.

Affiliated with

Also associated with

Rating

Method of patterning a metal layer in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of patterning a metal layer in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of patterning a metal layer in a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4118067