Method for accessing memory by way of step-increasing...

Details Method for accessing memory by way of step-increasing... Method for accessing memory by way of step-increasing...

2008-07-16

2009-12-01

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030

Reexamination Certificate

active

07626867

ABSTRACT:
A method for accessing memory is provided. The memory includes many multi-level cells each having at least a storage capable of storing 2n bits, n is a positive integer. The method for accessing memory includes the following steps: Firstly, threshold voltages of the storage are defined into 2nlevel respectively, wherein each of the 2nlevel corresponds to a storage status of n bits, and most significant bits of the storage statuses which level 0 to level 2n/2−1 correspond to are different from most significant bits of the storage statuses which level 2n/2to level 2n−1 correspond to. Next, a target data is divided into n portions and the divided target data is written into n temporary memories respectively. Then, n bits of the target data are written into the multi-level cell. Each of the n bits data is collected from each of the n temporary memories.

REFERENCES:
patent: 7002848 (2006-02-01), Takase et al.

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