Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-05-09
2009-06-30
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S074000, C257SE21400, C438S149000, C438S153000, C438S164000
Reexamination Certificate
active
07554118
ABSTRACT:
A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer layer formed of an amorphous silicon layer on a substrate, a second buffer layer formed on the first buffer layer. The TFT also includes a semiconductor layer formed on the second buffer layer and a gate electrode formed on the semiconductor layer. The dual buffer structure provides better barrier to impurities diffusing from the substrate, and also acts as a black matrix to reduce unwanted reflections and is a source of hydrogen to passivate other layers.
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Jeong Chang-Yong
Kang Tae-Wook
Kim Chang-Soo
Oh Jae-Young
Park Sang-Il
H.C. Park & Associates PLC
Lee Hsien-ming
Samsung Mobile Display Co., Ltd.
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