Pixel electrode of LCD device having first, second and third...

Liquid crystal cells – elements and systems – Particular structure – Having significant detail of cell structure only

Reexamination Certificate

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Details

C349S148000, C349S149000, C349S152000

Reexamination Certificate

active

07626668

ABSTRACT:
A method for manufacturing a pixel electrode contact structure of a thin-film transistors liquid crystal display is disclosed. First, a transparent substrate having a first insulating layer thereon is provided. Afterward, a first metal layer and a second metal layer are sequentially formed on the substrate and then be patterned by a halftone technology and an etching process, wherein the second metal layer is removed within the pixel electrode contact area. In the meantime, the drain lines of the thin-film transistor comprising the first metal layer and the second metal layer are formed. Next, a patterned passivation layer is formed on the substrate. Finally, a pixel electrode layer directly connecting the first metal layers within the pixel electrode contact structure is formed on the substrate. This invention provides the pixel electrode contact structure with low contact resistance and prevents the current leakage from the drain line to the storage capacitor.

REFERENCES:
patent: 5811318 (1998-09-01), Kweon
patent: 6172733 (2001-01-01), Hong et al.
patent: 6888586 (2005-05-01), Yoo et al.
patent: 7023508 (2006-04-01), You
patent: 1470927 (2004-01-01), None
patent: 1495851 (2004-05-01), None

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