Method for making compound semiconductor and method for...

Details Method for making compound semiconductor and method for... Method for making compound semiconductor and method for...

2005-03-14

2009-08-18

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S094000, C257S096000, C257SE21108

Reexamination Certificate

active

07575946

ABSTRACT:
In a method for making a compound semiconductor including a substrate and a compound semiconductor layer having a lattice mismatch ratio of 2% or more relative to the substrate, the method includes a first epitaxial growth step of forming a buffer layer on the substrate, the buffer layer having a predetermined distribution of lattice mismatch ratios in the thickness direction so as to reduce strain; and a second epitaxial growth step of forming the compound semiconductor layer on the buffer layer. The first epitaxial growth step is carried out by metal organic chemical vapor deposition at a deposition temperature of 600° C. or less.

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Chen et al., “Use of tertiarybutylarsine for GaAs growth”, Jan. 26, 1987, Appli. Phys. Lett. 50 (4) pp. 218-220.
Chen et al., “Use of tertiarybutylarsine for GaAs growth”, Applied Physics Letters 50 (4), Jan. 26, 1987, pp. 218-220.

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