Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-01-11
2009-11-24
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257SE33069, C372S045013, C372S046014, C438S022000, C438S043000
Reexamination Certificate
active
07622749
ABSTRACT:
A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
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European Search Report for corresponding Application No. 04725998.1, dated Mar. 17, 2006.
Hasegawa Yoshiaki
Yamada Atsushi
Yokogawa Toshiya
Fahmy Wael
Ingham John C
Panasonic Corporation
Renner , Otto, Boisselle & Sklar, LLP
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