Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-03-21
2009-11-17
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S066000, C257S057000, C257SE29292, C438S150000, C438S592000
Reexamination Certificate
active
07619255
ABSTRACT:
A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.
REFERENCES:
patent: 4800177 (1989-01-01), Nakamae
patent: 6545407 (2003-04-01), Raina
patent: 2004/0195575 (2004-10-01), Komoda et al.
patent: 2006/0228897 (2006-10-01), Timans
patent: 3282582 (2002-03-01), None
patent: 2004-281506 (2004-10-01), None
patent: 2004-336073 (2004-11-01), None
patent: 3613221 (2004-11-01), None
Kanoh Hiroshi
Tanaka Jun
Ho Tu-Tu V
NEC Corporation
NEC LCD Technologies Ltd.
Young & Thompson
LandOfFree
Layer-stacked wiring and method for manufacturing same and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Layer-stacked wiring and method for manufacturing same and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Layer-stacked wiring and method for manufacturing same and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4112230