Semiconductor device comprising through-electrode interconnect

Details Semiconductor device comprising through-electrode interconnect Semiconductor device comprising through-electrode interconnect

2005-03-31

2009-06-02

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S778000, C257SE21021, C257SE21507

Reexamination Certificate

active

07541677

ABSTRACT:
A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter plug is made larger than a cross sectional area and a diameter of a connection plug, and is made smaller than a cross sectional area and a diameter of the large diameter plug. In addition, a protruding portion formed in such a way that the small diameter plug is projected from the silicon substrate is put into an upper face of the large diameter plug. Further, an upper face of the small diameter plug is connected to a first interconnect.

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patent: 2002/0001936 (2002-01-01), Terauchi et al.
patent: 2000-311982 (2000-11-01), None

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