Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-01-31

2009-12-22

Menz, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S059000, C257S066000

Reexamination Certificate

active

07635861

ABSTRACT:
A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity.

REFERENCES:
patent: 4373965 (1983-02-01), Smigelski
patent: 4393572 (1983-07-01), Policastro et al.
patent: 4528211 (1985-07-01), Bhagat
patent: 4575921 (1986-03-01), Bhagat
patent: 5130770 (1992-07-01), Blanc et al.
patent: 5550397 (1996-08-01), Lifshitz et al.
patent: 5552624 (1996-09-01), Shotnicki et al.
patent: 5569615 (1996-10-01), Yamazaki et al.
patent: 5574292 (1996-11-01), Takahashi et al.
patent: 5616935 (1997-04-01), Koyama et al.
patent: 5659192 (1997-08-01), Sarma et al.
patent: 5726459 (1998-03-01), Hsu et al.
patent: 5739549 (1998-04-01), Takemura et al.
patent: 5821563 (1998-10-01), Yamazaki et al.
patent: 5863823 (1999-01-01), Burgener
patent: 5898204 (1999-04-01), Watanabe
patent: 5998854 (1999-12-01), Morishita et al.
patent: 6031249 (2000-02-01), Yamazaki et al.
patent: 6077731 (2000-06-01), Yamazaki et al.
patent: 6165876 (2000-12-01), Yamazaki et al.
patent: 6180957 (2001-01-01), Miyasaka et al.
patent: 6218219 (2001-04-01), Yamazaki et al.
patent: 6278132 (2001-08-01), Yamazaki et al.
patent: 6353244 (2002-03-01), Yamazaki et al.
patent: 6362027 (2002-03-01), Yamazaki et al.
patent: 6424008 (2002-07-01), Yamazaki et al.
patent: 6465287 (2002-10-01), Yamazaki et al.
patent: 6478263 (2002-11-01), Yamazaki et al.
patent: 6504174 (2003-01-01), Yamazaki et al.
patent: 6528358 (2003-03-01), Yamazaki et al.
patent: 6528820 (2003-03-01), Yamazaki et al.
patent: 6541315 (2003-04-01), Yamazaki et al.
patent: 6635521 (2003-10-01), Zhang et al.
patent: 6680223 (2004-01-01), Yamazaki et al.
patent: 6744069 (2004-06-01), Yamazaki et al.
patent: 6808965 (2004-10-01), Miyasaka et al.
patent: 6830617 (2004-12-01), Ohtani et al.
patent: 6872978 (2005-03-01), Zhang et al.
patent: 7037765 (2006-05-01), Yamazaki et al.
patent: 7037811 (2006-05-01), Yamazaki et al.
patent: 7056381 (2006-06-01), Yamazaki et al.
patent: 7078727 (2006-07-01), Yamazaki et al.
patent: 7135741 (2006-11-01), Yamazaki et al.
patent: 7141491 (2006-11-01), Yamazaki et al.
patent: 7173282 (2007-02-01), Yamazaki et al.
patent: 7294517 (2007-11-01), Takayama et al.
patent: 7422630 (2008-09-01), Yamazaki et al.
patent: 7427780 (2008-09-01), Yamazaki et al.
patent: 7456056 (2008-11-01), Yamazaki et al.
patent: 2001/0048115 (2001-12-01), Yamazaki et al.
patent: 2002/0098635 (2002-07-01), Zhang et al.
patent: 2004/0063257 (2004-04-01), Zhang et al.
patent: 2006/0145153 (2006-07-01), Yamazaki et al.
patent: 2008/0054267 (2008-03-01), Imamura
patent: 2008/0093637 (2008-04-01), Sankin et al.
patent: 2008/0173969 (2008-07-01), Hebert et al.
patent: 63-237571 (1988-10-01), None
patent: 04-206971 (1992-07-01), None
patent: 04-286339 (1992-10-01), None
patent: 06-029476 (1994-02-01), None
patent: 06-204334 (1994-07-01), None
patent: 06204334 (1994-07-01), None
patent: 06-232059 (1994-08-01), None
patent: 06-260650 (1994-09-01), None
patent: 07-111331 (1995-04-01), None
patent: 07-169974 (1995-07-01), None
patent: 07-176753 (1995-07-01), None
patent: 07-321339 (1995-12-01), None
patent: 08-032081 (1996-02-01), None
patent: 08-064833 (1996-03-01), None
Wang et al., Enhanced Performance of Accumulation Mode 0.5 μm CMOS/SOI Operated at 300 K and 85 K,IEEE, IEDM 91, pp. 679-682.
Fossum et al., “Anomalous Leadage Current in LPCVD Polysilicon MOSFET's”,IEEE Transactions on Electron Devices, vol. ED-32, No. 9; pp. 1878-1884, Sep. 1995.
Qian et al., “Inversion/Accumulation-Mode Polysilicon Thin-Film Transistors: Characterization and Unified Molding”,IEEE Transactions on Electron Devices, vol. 35, pp. 1501-1509, Sep. 1988.
Malhi et al., “p-Channel MOSFET's in LPCVD Polysilicon”,IEEE Electron Device Letters, vol. EDL-4, No. 10, pp. 369-371, Oct. 1983.

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