Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-04-30
2009-10-20
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010
Reexamination Certificate
active
07606278
ABSTRACT:
Disclosed herein is a semiconductor laser including: a first clad layer of a first conduction type; an active layer over said first clad layer; a saturable absorbing layer over said active layer; and a second clad layer of a second conduction type over said saturable absorbing layer; at least said second clad layer being provided with a pair of grooves parallel to each other with a predetermined spacing therebetween so as to form a ridge stripe therebetween. In the semiconductor laser, the distance from bottom surfaces of said grooves to an upper surface of said active layer is not less than 105 nm, and the distance from said bottom surfaces of said grooves to an upper surface of said saturable absorbing layer is not more than 100 nm.
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Japanese Office Action dated Jun. 10, 2008 for Application No. 2006-128193.
Japanese Office Action issued on Feb. 26, 2008 in connection with Japanese Patent Application No. 2006-128193.
Harvey Minsun
Nguyen Tuan N.
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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