Thick oxide P-gate NMOS capacitor for use in a low-pass...

Details Thick oxide P-gate NMOS capacitor for use in a low-pass... Thick oxide P-gate NMOS capacitor for use in a low-pass...

2004-10-28

2009-06-16

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S368000, C438S307000, C438S379000, C327S157000, C327S558000

Reexamination Certificate

active

07547956

ABSTRACT:
A circuit with dielectric thicknesses is presented that includes a low-pass filter including one or more semiconductor devices having a thick gate oxide layer, while further semiconductor devices of the circuit have thin gate oxide layers. The low-pass filter semiconductor device includes an N-type substrate, a P-type region formed on the N-type substrate, a thick gate oxide layer formed over the P-type region, a P+gate electrode formed over the thick gate oxide layer and coupled to a first voltage supply line, and P+pick-up terminals formed in the P-type region adjacent the gate electrode and coupled to a second voltage supply line. The low-pass filter semiconductor device acts as a capacitor, whereby a gate-to-substrate voltage is maintained at less than zero volts to maintain a stable control voltage for the circuit.

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