Method of fabricating a magnetic shift register

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S099000, C365S173000

Reexamination Certificate

active

07598097

ABSTRACT:
A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. A trench is etched in the multi-layer stack structure. A selective etching process is used to corrugate the walls of trench. A seed layer is applied to the walls and bottom of the trench; the seed layer is covered with a magnetic layer. The trench is filled with an insulating material. A patterned layer is applied and portions of insulating material exposed by the pattern are removed, forming holes. Magnetic material and seed layer exposed in holes is selectively removed. The holes are filled with insulating material and connecting leads are attached to data tracks.

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