SRAM devices and methods of fabricating the same

Details SRAM devices and methods of fabricating the same SRAM devices and methods of fabricating the same

2004-12-29

2009-10-06

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

C257S903000, C257SE21661, C257SE27099, C438S199000

Reexamination Certificate

active

07598542

ABSTRACT:
SRAM devices and methods of fabricating the same are disclosed, by which a process margin and a degree of device integration are enhanced by reducing the number of contact holes of an SRAM device unit cell using local interconnections. A disclosed example device includes first and second load elements; first and second drive transistors; a common gate electrode connected in one body to a gate electrode of the first load element and a gate electrode of the first drive transistor to apply a sync signal to the gate electrodes; the common gate electrode overlapping with a junction layer of the second load element and a junction layer region of the second drive transistor; the common gate electrode being electrically connected to an upper line via a plug in one contact hole.

REFERENCES:
patent: 4939567 (1990-07-01), Kenney
patent: 6015996 (2000-01-01), Lee
patent: 6090673 (2000-07-01), Allen et al.
patent: 6255701 (2001-07-01), Shimada
patent: 6313510 (2001-11-01), Kim et al.
patent: 7087493 (2006-08-01), Madan

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