Method for checking alignment accuracy using overlay mark

Details Method for checking alignment accuracy using overlay mark Method for checking alignment accuracy using overlay mark

2007-03-29

2009-10-06

Toatley, Jr., Gregory J (Department: 2877)

Optics: measuring and testing

By alignment in lateral direction

With registration indicia

C430S022000

Reexamination Certificate

active

07599063

ABSTRACT:
A method for checking the alignment accuracy using an overlay mark is provided. The overlay mark includes an inner mark and an outer mark formed on a wafer. The outer mark is formed in a lower layer on the wafer when the lower layer is patterned. The inner mark is formed within the outer mark over the lower layer when a lithography process for defining an upper layer is performed. A measurement process is conducted to obtain a first relation between each of the interior profiles of the outer marks and a second relation between each of the inner marks. Alternatively, a third relation between each of the interior profiles of the outer marks and each of the inner marks is obtained. The X-directional alignment accuracy and y-directional alignment accuracy are computed according to the first and the second relations, or the third relation.

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Article titled “Analytical model of the programming characteristics of scaled MONOS memories with a variety of trap densities and a proposal of a trap-density-modulated MONS memory” jointly authored by Nomoto et al., Sony Corporation Semiconductor Network Company, Kanagawa, Japan, (C) 2001 IEEE. pp. 13.5.1-13.5.4.

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