Semiconductor device manufacturing: process – Making regenerative-type switching device
Reexamination Certificate
2005-06-22
2009-02-17
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Making regenerative-type switching device
C257S163000, C438S139000, C438S140000, C438S510000, C438S515000, C438S527000, C438S529000, C438S530000, C438S531000
Reexamination Certificate
active
07491586
ABSTRACT:
A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An activation anneal may activate dopants previously implanted for the different regions. A damaging implant of germanium or xenon or argon may be directed into select regions of the silicon including at least one p-n junction region for the access device and the thyristor. A re-crystallization anneal may then be performed to re-crystallize at least some of the damaged lattice structure resulting from the damaging implant. The re-crystallization anneal may use a temperature less than that of the previous activation anneal.
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Cho Hyun-Jin
Gupta Rajesh N.
Horch Andrew E
Nemati Farid
Robins Scott
Fields IP, PS
Green Phillip
Smith Matthew S.
T-RAM Semiconductor, Inc.
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