Semiconductor device with non-volatile memory and random...

Details Semiconductor device with non-volatile memory and random... Semiconductor device with non-volatile memory and random...

2007-05-08

2009-06-30

Dinh, Son (Department: 2824)

Static information storage and retrieval

Interconnection arrangements

C365S230010, C365S230030

Reexamination Certificate

active

07554830

ABSTRACT:
A semiconductor device including a large capacity non-volatile memory and at least one random access memory, said the access time of said device being matched to the access time of each random access memory. The semiconductor memory device is comprised of: a non-volatile memory FLASH having a first reading time; a random access memory DRAM having a second reading time which is more than 100 times shorter than the first reading time; a circuit that includes a control circuit connected to both the FLASH and the DRAM and enabled to control accesses to those FLASH and DRAM; and a plurality of I/O terminals connected to the circuit. As a result, FLASH data is transferred to the DRAM before the DRAM is accessed, thereby matching the access time between the FLASH and the DRAM. Data is written back from the DRAM to the FLASH as needed, thereby keeping data matched between the FLASH and the DRAM and storing the data.

REFERENCES:
patent: 5315549 (1994-05-01), Scherpenberg et al.
patent: 5367078 (1994-11-01), Ohno et al.
patent: 5412612 (1995-05-01), Oyama
patent: 5530673 (1996-06-01), Tobita et al.
patent: 5625840 (1997-04-01), Numata et al.
patent: 5650976 (1997-07-01), McLaury
patent: 5696917 (1997-12-01), Mills et al.
patent: 6029046 (2000-02-01), Khan
patent: 6173358 (2001-01-01), Combs
patent: 6324103 (2001-11-01), Hiraki et al.
patent: 6484270 (2002-11-01), Odani
patent: 7280426 (2007-10-01), Miura et al.
patent: 2002/0120820 (2002-08-01), Higuchi et al.
patent: 0 566 306 (1993-04-01), None
patent: 566 306 (1993-04-01), None
patent: 0-588 500 (1993-08-01), None
patent: 2-51724 (1988-08-01), None
patent: 5-46328 (1991-08-01), None
patent: 5-299616 (1992-04-01), None
patent: 6-195258 (1992-07-01), None
patent: 6-215589 (1993-01-01), None
patent: 7-146820 (1993-04-01), None
patent: 6-192258 (1993-08-01), None
patent: 7-146820 (1994-04-01), None
patent: 10-11348 (1996-06-01), None
patent: 2001-5723 (1999-06-01), None
patent: 2002-328836 (2002-01-01), None
patent: WO 95/34030 (1995-06-01), None
Data Sheet, “DiskOnChip Millennium MD 2800, MD2810 8MB Single Chip Flash Disk”, M-System, Jul. 2000, Rev. 2.1 pp. 1-14.
“The sloution replaced with a hard disk for embedded device, Overview of DiskOnChip”, Interface, CQ Publishing Co., Ltd., May 31, 2001, vol. 27, No. 7, pp. 131-134 in Japanese.
Sharp Corporation, “LRS1337 Stacked Chip 32M Flash Memory and 4M SDRAM” Data Sheet, 1999, pp. 1-24.
Keith D. Gann, “High Density Packaging of Flash Memory”, 1998 Int'l NonVolatile Memory Technology Conference, pp. 96-98.
Office Action from Korean Patent Office dated May 29, 2008 regarding Korean Application No. 10-2002-0032287 in Korean language.

Affiliated with

Also associated with

Rating

Semiconductor device with non-volatile memory and random... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with non-volatile memory and random..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with non-volatile memory and random... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4106719