Process and apparatus for the low pressure chemical vapor deposi

Details Process and apparatus for the low pressure chemical vapor deposi Process and apparatus for the low pressure chemical vapor deposi

1986-07-03

1987-10-13

Smith, John D.

Fishing, trapping, and vermin destroying

118715, 118733, B05D 512

Patent

active

046998055

ABSTRACT:
A process and apparatus for LPCVD of thin metallic films is disclosed. The apparatus includes a U-shaped injection tube through which high molecular weight reactants are injected into a reaction chamber. The input and output ends of the U-shaped tube are coupled to a removeable feedthrough plate which, in turn, is coupled to the end cap which seals one end of the reaction chamber. A deposition surface is placed in the chamber through a second end cap at the opposite end of the chamber. The output end of the U-shaped injection tube is coupled to a vacuum pump and the high molecular weight reactant is drawn through the injection tube and dispersed in the reaction chamber through a plurality of holes in the input side of the injection tube.

REFERENCES:
patent: 4392299 (1983-07-01), Shaw
patent: 4619840 (1986-10-01), Goldman
C. E. Morosanu and V. Soltuz, "Thin Film Preparation by Plasma and Low Pressure CVD in a Horizontal Reactor", Vacuum, vol. 31, No. 7, pp. 309-313, 1981.
M. J. Cooke, "A Review of LPCVD Metallization for Semiconductor Devices", Vacuum, vol. 35, No. 2, pp. 67-73, 1985.

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