Semiconductor device and electro-optical device

Details Semiconductor device and electro-optical device Semiconductor device and electro-optical device

2007-12-03

2009-12-01

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S040000, C257S642000, C257S643000, C257S759000, C257SE39007, C257SE25032, C428S001100, C428S001230, C428S001520

Reexamination Certificate

active

07626205

ABSTRACT:
A semiconductor device and an electro-optical device that ensures a stable output are provided even when there is a change in a source-drain current in a saturated operation region of a thin film transistor due to kink effects. The thin film transistor has a multi-gate structure with a polycrystalline silicon film as an active layer, and a source-side first thin film transistor portion and a drain-side second thin film transistor portion connected in series. The first thin film transistor portion has a drain-side back gate electrode that is connected with a first front gate electrode. The second thin film transistor portion has a source-side back gate electrode that is connected with a second front gate electrode.

REFERENCES:
patent: 6759283 (2004-07-01), Yasuda et al.
patent: 2008/0002084 (2008-01-01), Park et al.
Mariucci et al., “Asymmetric Fingered polysilicon Thin Film Transistors for kink-effect suspension”AM-LCD '03, p. 57-60.
Nam et al., “Kink-current Reduced Poly-Si TFTs Employing Asymmetric Dual-Gate Design for AMOLED Pixel Elements,”IDW '04, p. 307-310.

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