Nanoscale electronic devices and fabrication methods

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S597000, C257SE21001, C977S720000, C977S773000

Reexamination Certificate

active

07494907

ABSTRACT:
The invention relates to a method of forming a conducting nanowire between two contacts on a substrate surface wherein a plurality of nanoparticles is deposited on the substrate in the region between the contacts, and the single nanowire running substantially between the two contacts is formed by either by monitoring the conduction between the contacts and ceasing deposition at the onset of conduction, and/or modifying the substrate to achieve, or taking advantage of pre-existing topographical features which will cause the nanoparticles to form the nanowire. The resultant conducting nanowires are also claimed as well as devices incorporating such nanowires.

REFERENCES:
patent: 6294401 (2001-09-01), Jacobson et al.
patent: 6312768 (2001-11-01), Rode et al.
patent: 6586787 (2003-07-01), Shih et al.
patent: 6723606 (2004-04-01), Flagan et al.
patent: 6815218 (2004-11-01), Jacobson et al.
patent: 2003/0048619 (2003-03-01), Kaler et al.
patent: 2003/0081305 (2003-05-01), Chung et al.
patent: 2004/0038556 (2004-02-01), French et al.
patent: 2004/0129570 (2004-07-01), Talin et al.
patent: 2005/0200272 (2005-09-01), Shimoyama et al.
patent: 2006/0063296 (2006-03-01), Park et al.
International Search Report (International Application No. PCT/NZ02/00160, International Filing Date: Aug. 20, 2002.
Chen, W., et al., “Coulomb blockade at 77 K in nanoscale metallic islands in a lateral nanostructure,” Appl. Phys. Lett. 66(24):3383-3384, 1995.
Klein, D.K., et al., “An approach to electrical studies of single nanocrystals,” Appl. Phys. Lett., 68(18):2574-2576, 1996.
Bezryadin, A., et al., “Nanofabricaion of electrodes with sub-5 nm spacing for transport experiments on single molecules and metal clusters,” J. Vac. Sci. Technol. B, 15(4):793-799, 1997.
Bezryadin, A., et al., “Electrostatic trapping of single conducting nanoparticles between nanoelectrodes,” Appl. Phys. Lett. 71(9):1273-1275, 1997.
Tans, S.J., et al., “Room-temperature transistor based on a single carbon nanotube,” Nature, 393:49-51, 1998.
Collins, P.G., et al., “Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown,” Science, 292:706-709, 2001.
Rochefort, A., et al., “Switching behavior of semiconducting carbon nanotubes under an external electric field,” Appl. Phys. Lett., 78(17):2521-2523, 2001.
Rodrigues, V., et al., “Signature of Atomic Structure in the Quantum Conductance of Gold Nanowires,” Phys. Rev. Lett., 85(19):4124-4127, 2000.
Morpurgo, A.F., et al., “Controlled fabrication of metallic electrodes with atomic separation,” Appl. Phys. Lett., 74(14):2084-2086, 1999.
Li, C.Z., et al., “Molecular detection based on conductance quantization of nanowires,” Appl. Phys. Lett., 76(10):1333-1335, 2000.
Palmer, R., “Welcome to Clusterworld,” New Scientist, Feb. 22, 1997, 4 pages.
Goldby, I.M., et al., “Gas condensation source for production and deposition of size-selected metal clusters,” Rev. Sci. Instrum., 68(9):3327-3334, 1997.
Tada, T., et al., “Fabrication of 10-nm Si pillars with self-formed etching masks,” MicroElectronic Engineering, 35:293-296, 1997.
Tada, T., et al., “Spontaneous production of 10-nm Si structures by plasma etching using self-formed masks,” Appl. Phys. Lett., 70(19):2538-2540, 1997.
Liu, J., et al., “Microfabrication of nanoscale cluster chains on a pattered Si surface,” Appl. Phys. Lett., 73(14):2030-2032, 1998.
Goldby, I.M., et al., “Diffusion and aggregation of size-selected silver clusters on a graphite surface,” Appl. Phys. Lett., 69(19):2819-2821, 1996.
Francis, G.M., et al., “Diffusion controlled growth of metallic nanoclusters at selected surface sites,” J. Appl. Phys., 79(6):2942-2947, 1996.
Seeger, K., et al., “Fabrication of silicon cones and pillars using rough metal films as plasma etching masks,” Appl. Phys. Lett., 74(11):1627-1629, 1999.
Carroll, S.J., et al., “Trapping of size-selected Ag clusters at surface steps,” Appl. Phys. Lett., 72(3):305-307, 1998.
Chen, W., et al., “Fabrication of sub-10nm structures by lift-off and by etching after electron-beam exposure of poly(methylmethacrylate) resist on solid substrates,” J. Vac. Sci. Technol. B, 11(6):2519-2523, 1993.
Hori, M., et al., “Sub-5 nm gold dot formation using retarding-field single ion deposition,” Appl. Phys. Lett., 73(22):3223-3225, 1998.
Gurevich, L., et al., “Scanning gate spectroscopy on nanoclusters,” Appl. Phys. Lett., 76(3):384-386, 2000.
Park, J., et al., “Coulomb blockade and the Kondo effect in single-atom transistors,” Nature, 417:722-725, 2002.
Liang, W., et al., “Kondo resonance in a single-molecule transistor,” Nature, 417:425-728, 2002.
Yamamuro, S., et al., “Size-Dependent Nonuniversal Conductivity in Nanometer-Size Co Cluster Assemblies,” Journal of Physical Society of Japan, 68(1):28-31, 1999.
Laibowitz, R.B., et al., “Cluster-size distribution in Al-Al2O3films near the metal-insulator transition,” Physical Review B, 25(4):2965-2967, 1982.
Voss, R.F., et al., “Fractal (Scaling) Clusters in Thin Gold Films near the Percolation Threshold,” Physical Review Letters, 49(19):1441-1444, 1982.
Kapitulnik, A., et al., “Percolation Characteristics in Discontinuous Thin Films of Pb,” Physical Review Letters, 49(19):1444-1448, 1982.
Jensen, P., et al., “Direct observation of the infinite percolation cluster in thin films: Evidence for a double percolation process,” Physical Review B 47(9):5008-5012, 1993.
Melinon, P., et al., “Comparison of molecular and cluster deposition: Evidence of different percolation processes,” Physical Review B, 44(22):12562-12564, 1991.
De Heer, W.A., “The physics of simple metal clusters: experimental aspects and simple models,” Reviews of Modern Physics, 65(3):611-624, 1993.
Stauffer, D., “Introduction to Percolation Theory,” Taylor & Francis, London 1985, table of contents, preface, and pp. 1-100.
Chopra, H.D., et al., “Ballistic magnetoresistance over 3000% in Ni nanocontacts at room temperature,” Physical Review B, 66:020403-1-020402-3, 2002.
Hiramoto, T., et al., “Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching,” Jpn. J. Appl. Phys., 35:6664-6667, 1996.
Von Issendorff, B., et al., “A new high transmission infinite range mass selector for cluster an nanoparticle beams,” Review of Scientific Instruments, 70(12):4497-4501, 1999.
Hall, B., “An installation for the study of unsupported ultrafine particles by electron diffraction, with application to silver: observation of multiply twinned particle structures,” 1991, pp. 33-45.
Stanley, H.E., “Scaling, universality, and renormalization: Three pillars of modern critical phenomena,” Rev. Mod. Phys. 71(2):S358-S366, 1999.
Back, C.H., et al., “Experimental confirmation of universality for a phase transition in two dimensions,” Nature, 378:597-600, 1995.
Monetti, R.A., et al., “Critical behavior of the site percolation model on the square lattice in a L×M geometry,” Z. Phys. B-Condensed Matter, 82:129-134, 1991.
Fuchs, G., et al., “Low-energy Bi cluster beam deposition,” J. Phys. D, 26:1114 (1993), 3 pages.
Zhang, et al., “Bismuth quantum-wire arrays fabricated by a vacuum melting and pressure injection process,” Journal of Materials Research 13 (7), 1745-1748 (Jul. 1998).
Jorritsma, J., et al., “Fabrication of large arrays of metallic nanowires on V-grooved substrates” Applied Physics Letters 67 (10), 1489-1491 (Sep. 4, 1995).
Jorritsma, J. and J. A. Mydosh, “Magnetic Properties of Au1-xFex Nanowires” IEEE Transactions on Magnetics 34 (4), 994-996 (Jul. 1998).
Himpsel, F. J., et

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nanoscale electronic devices and fabrication methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanoscale electronic devices and fabrication methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanoscale electronic devices and fabrication methods will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4105815

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.